Part Number |
K1305 |
Manufacturers |
Renesas |
Logo |
|
Description |
Silicon N-Channel MOSFET |
Datasheet |
K1305 Datasheet (PDF) |
2SK1305
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device
Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G
12 3
S
REJ03G0924-0200 (Previous: ADE-208-1263)
Rev.2.00 Sep 07, 2005
1. Gate 2. Drain 3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1305
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch
Tstg
Item
Symbol
Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to .