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K1305 Dataheets PDF



Part Number K1305
Manufacturers Hitachi
Logo Hitachi
Description 2SK1305
Datasheet K1305 DatasheetK1305 Datasheet (PDF)

2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1305 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain .

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2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1305 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 100 ±20 10 40 10 25 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1305 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 100 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I GSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance — — 1.0 — — Forward transfer admittance |yfs| 4.5 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF — — — — — Body to drain diode reverse recovery time t rr — Note: 1. Pulse test Typ Max Unit ——V ——V — ±10 µA — 250 µA — 2.0 V 0.20 0.25 Ω 0.25 0.35 Ω 7.0 — S 525 — pF 205 — pF 60 — pF 5 — ns 50 — ns 170 — ns 75 — ns 1.2 — V 220 — ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V *1 ID = 5 A, VGS = 4 V *1 ID = 5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6 Ω IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 50 A/µs See characteristic curves of 2SK1300. 3 Channel Dissipation Pch (W) 2SK1305 Power vs. Temperature Derating 30 20 10 0 50 100 150 Case Temperature TC (°C) Drain Current ID (A) Maximum Safe Operation Area 100 µs 100 10 30 10 OpiserLaitmiointeidn bthyisRADrSea(on) µs 1 PW ms = 10 DC ms 3 1.0 Operation (T (1 0.3 Ta = 25°C C = 25°C) shot) 0.1 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) 3 D=1 1.0 0.5 Normalized Transient Thermal Impedance vs. Pulse Width TC = 25°C 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 1 Shot Pulse 0.01 10 µ 100 µ θch–c (t) = γS (t) · θch–c θch–c = 5.0°C/W, TC = 25°C PDM PW T D = PW T 1m 10 m 100 m Pulse Width PW (s) 1 10 4 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 17.0 ± 0.3 12.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 2.54 ± 0.5 2.0 ± 0.3 5.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.7 ± 0.1 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi s.


TC9320F K1305 2SK1305


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