2SK1305
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device
Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D 12 3 1. Gate
G 2. Drain 3. Source
S
2SK1305
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Symbol VDSS VGSS ID I *1
D(pulse)
I DR Pch*2 Tch Tstg
Ratings 100 ±20 10 40 10 25 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1305
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS 100
Gate to source breakdown voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate t.