CMXT3906 SURFACE MOUNT
DUAL PNP SILICON TRANSISTORS
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The C...
CMXT3906 SURFACE MOUNT
DUAL
PNP SILICON
TRANSISTORS
SOT-26 CASE
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT3906 type is a dual
PNP silicon
transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, and designed for small signal general purpose amplifier and switching applications.
MARKING CODE: X2A
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC PD TJ, Tstg ΘJA
40 40 5.0 200 350 -65 to +150 357
UNITS V V V mA
mW °C °C/W
ELECTRICAL CHARACTERISTICS PER
TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN MAX
ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib hie
VCE=30V, VEB=3.0V IC=10μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz
40 40 5.0
0.65
60 80 100 60 30 250
2.0
50
0.25 0.40 0.85 0.95
300
4.5 12 12
UNITS nA V V V V V V V
MHz pF pF kΩ
R4 (16-March 2020)
CMXT3906
SURFACE MOUNT DUAL
PNP
SILICON
TRANSISTORS
ELECTRICAL CHARACTERISTICS PER
TRANSISTOR - Continued: (TA=25°C unless otherwise noted)
SYMBOL
TEST C...