CMXDM7002A

CMXDM7002A SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-26 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXDM7002A is special dual version of the 2N7002 enhancementmode N-Channel MOSFET manufactured by the N-Channel DMOS Process, and designed for high speed pulsed amplifier and driver applications. This special dual transistor device offers low rDS(ON) and low VDS(ON). MARKING CODE: X02A MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA 60 60 40 280 280 1.5 1.5 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS VDS=60V, VGS=0 1.0 IDSS VDS=60V, VGS=0, TJ=125°C 500 ID(ON) VGS=10V, VDS=10V 500 BVDSS VGS=0, ID=10μA 60 VGS(th) VDS=VGS, ID=250μA 1.0 2.5 VDS(ON) VGS=10V, ID=500mA 1.0 VDS(ON) VGS=5.0V, ID=50mA 0.15 VSD VGS=0, IS=400mA 1.2 rDS(ON) VGS=10V, ID=500mA 2.0 rDS(ON) VGS=10V, ID=500mA, TJ=125°C 3.5 rDS(ON) VGS=5.0V, ID=50mA 3.0 rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C 5.0 gFS VDS=10V, ID=200mA 80 Crss VDS=25V, VGS=0, f=1.0MHz 5.0 Ciss VDS=25V, VGS=0, f=1.0MHz 50 Coss VDS=2...