Field Stop Trench IGBT
Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coeffi...
Description
Features: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5μs RoHS Compliant JEDEC Qualification
Applications : UPS, Welder, Inverter, Solar
TGAN30N60FDR
Field Stop Trench IGBT
E GC
Device TGAN30N60FDR
Package TO-3PN
Marking TGAN30N60FDR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Power Dissipation
TC = 100 ℃ TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM IF
PD
TJ TSTG TL
Value
600 ±20 60 30 90 30 231 93 -55 ~ 150 -55 ~ 150
300
Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT) RθJC (DIODE)
RθJA
Value
0.54 1.12 40
Nov. 2014. Rev 0.0
www.trinnotech.com
Remark RoHS
Unit V V A A A A W W ℃ ℃ ℃
Unit ℃/W ℃/W ℃/W
1/8
TGAN30N60FDR
Field Stop Trench IGBT
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector ...
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