TGAN60N60FD

Features: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification Applications : Induction Heating, Soft Switching Application, UPS, Welder, Inverter TGAN60N60FD Field Stop Trench IGBT E GC Device TGAN60N60FD Package TO-3PN Marking TGAN60N60FD Absolute Maximum Ratings Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Pulsed Collector Current (Note 1) Diode Continuous Forward Current Power Dissipation Operating Junction Temperature TC = 25 ℃ TC = 100 ℃ TC = 100 ℃ TC = 25 ℃ TC = 100 ℃ Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Symbol VCES VGES Ic ICM IF PD TJ TSTG TL Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RθJC (IGBT) RθJC (DIODE) RθJA Value 600 ±20 120 60 180 30 347 139 -55 ~ 150 -55 ~ 150 300 Value 0.36 1.12 40 Remark RoHS Unit V V A A A A W W ℃ ℃ ℃ Unit ℃/W ℃/W ℃/W Mar. 2013 www.trinnotech.com 1/8 TGAN60N60FD Field Stop Trench IGBT Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted Parameter Symbol Test condition OFF Collector – Emitter Breakdown Voltage Zero Gate Voltage Collector Current Gate...