NPT Trench IGBT
Features: • 1200V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient ...
Description
Features: 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification
Applications : Induction Heating, general purpose inverter application
TGL40N120ND
NPT Trench IGBT
GC E
Device TGL40N120ND
Package TO-264
Marking TGL40N120ND
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current Pulsed Collector Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Diode Continuous Forward Current Diode Maximum Forward Current
TC = 100 ℃
Power Dissipation
TC = 25 ℃ TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Symbol VCES VGES
Ic
ICM IF IFM
PD
TJ TSTG TL
Notes : (1) Repetitive rating : Pulse width limited by maximum junction temperature
Value 1200 ±20
80 40 120 40 120 455 182 -55 ~ 150 -55 ~ 150
300
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT) RθJC (DIODE)
RθJA
Value
0.275 0.95 25
Oct. 2013 : Rev1.1
www.trinnotech.com
Remark RoHS
Unit V V A A A A A W W ℃ ℃ ℃
Unit ℃/W ℃/W ℃/W
1/8
TGL40N120ND
NPT Trench IGBT
Electrical Characteristics of the IGBT TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
OFF Collector – Emitter Breakdown Voltage Zero Gate Voltag...
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