TMU8N25ZG

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD8N25Z(G)/TMU8N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on)MAX 8A <0.6W I-PAK Device TMD8N25Z/TMU8N25Z TMD8N25ZG/TMU8N25ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD8N25Z/TMU8N25Z TMD8N25ZG/TMU8N25ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD8N25Z(G)/TMU8N25Z(G) 250 ±30 8 3.6 32 147 8 5.2 52 0.41 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA May 2012 : Rev0 www.trinnotech.com TMD8N25Z(G)/TMU8N25Z(G) 2.4 110 Unit ℃/W ℃/W 1/6 TMD8N25Z(G)/TMU8N25Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltag...