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TMP16N25Z

TRinno

N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...


TRinno

TMP16N25Z

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Description
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP16N25Z(G)/TMPF16N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on) 16A <0.24W Device TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP16N25Z(G) TMPF16N25Z(G) 250 ±30 16 16 * 8.3 8.3 * 64 64 * 368 16 9.39 93.9 30.4 0.75 0.24 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP16N25Z(G) 1.33 62.5 June 2012 : Rev0 www.trinnotech.com TMPF16N25Z(G) 4.1 62.5 Unit ℃/W ℃/W 1/7 TMP16N25Z(G)/TMPF16N25Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbo...




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