Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
Device TMD3N40ZG/TMU3N40ZG
Package D-PAK/I-PAK
TMD3N40ZG/TMU3N40ZG
VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.4 W(max) @ VGS= 10 V
I-PAK
D G
Marking TMD3N40ZG/TMU3N40ZG
S
Remark Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1) Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
August 2011 : Rev0
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TMD3N40ZG/TMU3N40ZG 400 ±30 2.0* 1.2* 8* 46 2 3 30 0.24 4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
TMD3N40ZG/TMU3N40ZG 4.2 110
Unit ℃/W ℃/W
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TMD3N40ZG/TMU3N40ZG
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 mA 400 --
--
V
Zero Gate Voltage Drain Current
VDS = 400 V, VGS = 0 V
--
IDSS
VDS = 320 V, TC = 125°C
--
-- 1 mA -- 10 mA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 mA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
mA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th) RDS(on)
gFS
VDS = VGS, ID = 250 mA VGS = 10 V, ID = 1 A VDS = 30 V, ID = 1 A
2 -- 4 -- 2.75 3.4 -- 9 --
V W S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss
VDS = 25 V, VGS = 0 V,
-- 210 --
pF
Coss
f = 1.0 MHz
-- 32 -- pF
Crss -- 3.7 -- pF
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD = 200 V, ID = 2 A, RG = 25 Ω
VDS = 320V, ID = 2 A, VGS = 10 V
-- 8 -- ns -- 9 -- ns -- 19 -- ns -- 8 -- ns -- 3.7 -- nC -- 1.2 -- nC -- 1.1 -- nC
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM VSD trr Qrr
---
--VGS = 0 V, IS = 2 A VGS = 0 V, IS = 2 A dIF / dt = 100 A/ms
-- -- 2 A
-- -- 8 A
-- -- 1.5 V
-- 174 --
ns
-- 0.54 --
mC
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=10mH, I AS =2A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 2A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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Drain Current, I [A] D
5
Top V =15.0V GS 10.0V
4 8.0V 7.0V 6.5V 6.0V
3 Bottom 5.0V
2
1
1. T = 25℃ C
2. 250μs Pulse Test 5 10 15 20
Drain-Source Voltage, V [V] DS
Drain Current, I [A] D
TMD3N40ZG/TMU3N40ZG
10
V = 30V DS
250 μs Pulse Test
150℃ 1
25℃
-55℃ 0.1
246
Gate-Source Voltage, V [V] GS
8
8
T = 25℃ J
6
4
2
0 01
V = 10V GS
V = 20V GS
23456
Drain Current,I [A] D
Reverse Drain Current, I [A] DR
10
V = 0V GS
250μs Pulse Test
8
6
4
2
150℃
25℃
0.0 0.5 1.0 1.5
Source-Drain Voltage, V [V] SD
2.0
Drain-Source On-Resistance R [Ω]
DS(ON)
Capacitance [pF]
400
300
200
100
0 10-1
C iss
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
V =0V GS
f = 1 MHz
C oss
C rss
100 101
Drain-Source Voltage, V [V] DS
Gate-Source Voltage, V [V] GS
12 I = 2A
D
10
8
6
V = 80V DS
V = 200V DS
V = 320V DS
4
2
0 01234
Total Gate Charge, Q [nC] G
5
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Drain-Source Breakdown Voltage BV , (Normalized)
DSS
1.20 1.15 1.10
V =0V GS
I = 250 μA
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
160
Drain-Source On-Resistance R , (Normalized)
DS(ON)
TMD3N40ZG/TMU3N40ZG
3.0
V = 10 V GS
I =1A 2.5 D
2.0
1.5
1.0
0.5
0.0 -80
-40 0 40 80 120
Junction Temperature, T [oC] J
160
3
Operation in This Area
101
is Limited by R DS(on)
10 us
100 us
2
1 ms 10 ms
100 DC 100 ms
Drain Current, I [A] D
1
10-1
T = 25 oC C
T = 150 oC J
Single Pulse
0 10-2 25 50 75 100 125 150 100
Case Temperature, T [℃] C
101 102
Drain-Source Voltage, V [V] DS
Drain Current, I [A] D
August 2011 : Rev0
Transient thermal impedance Z (t)
thJC
Duty=0.5
100 0.2 0.1 0.05 0.02.