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TMU3N40ZG Dataheets PDF



Part Number TMU3N40ZG
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMU3N40ZG DatasheetTMU3N40ZG Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK Device TMD3N40ZG/TMU3N40ZG Package D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.4 W(max) @ VGS= 10 V I-PAK D G Marking TMD3N40ZG/TMU3N40ZG S Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK Device TMD3N40ZG/TMU3N40ZG Package D-PAK/I-PAK TMD3N40ZG/TMU3N40ZG VDSS = 440 V @Tjmax ID = 2A RDS(on) = 3.4 W(max) @ VGS= 10 V I-PAK D G Marking TMD3N40ZG/TMU3N40ZG S Remark Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA August 2011 : Rev0 www.trinnotech.com TMD3N40ZG/TMU3N40ZG 400 ±30 2.0* 1.2* 8* 46 2 3 30 0.24 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ TMD3N40ZG/TMU3N40ZG 4.2 110 Unit ℃/W ℃/W 1/6 TMD3N40ZG/TMU3N40ZG Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 mA 400 -- -- V Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- IDSS VDS = 320 V, TC = 125°C -- -- 1 mA -- 10 mA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 mA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 mA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 mA VGS = 10 V, ID = 1 A VDS = 30 V, ID = 1 A 2 -- 4 -- 2.75 3.4 -- 9 -- V W S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss VDS = 25 V, VGS = 0 V, -- 210 -- pF Coss f = 1.0 MHz -- 32 -- pF Crss -- 3.7 -- pF SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) tr td(off) tf Qg Qgs Qgd VDD = 200 V, ID = 2 A, RG = 25 Ω VDS = 320V, ID = 2 A, VGS = 10 V -- 8 -- ns -- 9 -- ns -- 19 -- ns -- 8 -- ns -- 3.7 -- nC -- 1.2 -- nC -- 1.1 -- nC SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qrr --- --VGS = 0 V, IS = 2 A VGS = 0 V, IS = 2 A dIF / dt = 100 A/ms -- -- 2 A -- -- 8 A -- -- 1.5 V -- 174 -- ns -- 0.54 -- mC Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=10mH, I AS =2A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 2A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics August 2011 : Rev0 www.trinnotech.com 2/6 Drain Current, I [A] D 5 Top V =15.0V GS 10.0V 4 8.0V 7.0V 6.5V 6.0V 3 Bottom 5.0V 2 1 1. T = 25℃ C 2. 250μs Pulse Test 5 10 15 20 Drain-Source Voltage, V [V] DS Drain Current, I [A] D TMD3N40ZG/TMU3N40ZG 10 V = 30V DS 250 μs Pulse Test 150℃ 1 25℃ -55℃ 0.1 246 Gate-Source Voltage, V [V] GS 8 8 T = 25℃ J 6 4 2 0 01 V = 10V GS V = 20V GS 23456 Drain Current,I [A] D Reverse Drain Current, I [A] DR 10 V = 0V GS 250μs Pulse Test 8 6 4 2 150℃ 25℃ 0.0 0.5 1.0 1.5 Source-Drain Voltage, V [V] SD 2.0 Drain-Source On-Resistance R [Ω] DS(ON) Capacitance [pF] 400 300 200 100 0 10-1 C iss C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd V =0V GS f = 1 MHz C oss C rss 100 101 Drain-Source Voltage, V [V] DS Gate-Source Voltage, V [V] GS 12 I = 2A D 10 8 6 V = 80V DS V = 200V DS V = 320V DS 4 2 0 01234 Total Gate Charge, Q [nC] G 5 August 2011 : Rev0 www.trinnotech.com 3/6 Drain-Source Breakdown Voltage BV , (Normalized) DSS 1.20 1.15 1.10 V =0V GS I = 250 μA D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 160 Drain-Source On-Resistance R , (Normalized) DS(ON) TMD3N40ZG/TMU3N40ZG 3.0 V = 10 V GS I =1A 2.5 D 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 3 Operation in This Area 101 is Limited by R DS(on) 10 us 100 us 2 1 ms 10 ms 100 DC 100 ms Drain Current, I [A] D 1 10-1 T = 25 oC C T = 150 oC J Single Pulse 0 10-2 25 50 75 100 125 150 100 Case Temperature, T [℃] C 101 102 Drain-Source Voltage, V [V] DS Drain Current, I [A] D August 2011 : Rev0 Transient thermal impedance Z (t) thJC Duty=0.5 100 0.2 0.1 0.05 0.02.


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