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TMU3N50AZ

N-channel MOSFET

Description

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD3N50AZ(G)/TMU3N50AZ(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W I-PAK Device TMD3N50AZ / TMU3N50AZ TMD3N50AZG / TMU3N50AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute...

TRinno

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