TMP3N50AZ

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP3N50AZ(G)/TMPF3N50AZ(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W Device TMP3N50AZ / TMPF3N50AZ TMP3N50AZG / TMPF3N50AZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP3N50AZ / TMPF3N50AZ TMP3N50AZG / TMPF3N50AZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP3N50AZ(G) TMPF3N50AZ(G) 500 ±30 2.5 2.5 * 1.71 1.71 * 10 10 * 84 2.5 5.2 52.1 17.3 0.416 0.138 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP3N50AZ(G) 2.4 62.5 October 2012 : Rev0 www.trinnotech.com TMPF3N50AZ(G) 7.2 62.5 Unit ℃/W ℃/W 1/7 TMP3N50AZ(G)/TMPF3N50AZ(G) Electrical Characteristic...