DatasheetsPDF.com

TMPF3N50Z Dataheets PDF



Part Number TMPF3N50Z
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF3N50Z DatasheetTMPF3N50Z Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP3N50Z(G)/TMPF3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W Device TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 .

  TMPF3N50Z   TMPF3N50Z



Document
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP3N50Z(G)/TMPF3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.5A < 2.8W Device TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP3N50Z / TMPF3N50Z TMP3N50ZG / TMPF3N50ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP3N50Z(G) TMPF3N50Z(G) 500 ±30 2.5 2.5 * 1.8 1.8 * 10 10 * 107 2.5 5.21 52.1 17.3 0.41 0.13 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA November 2012 : Rev0 www.trinnotech.com TMP3N50Z(G) 2.4 62.5 TMPF3N50Z(G) 7.2 62.5 Unit ℃/W ℃/W 1/7 TMP3N50Z(G)/TMPF3N50Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 500 -- -- V Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- IDSS VDS = 400 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 2 -- 4 V RDS(on) VGS = 10 V, ID = 1.25 A -- 2.3 2.8 W gFS VDS = 30 V, ID = 1.25 A -- 5 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 395 --- 44 --- 8 -- pF pF pF SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) VDD = 300 V, ID = 2.5 A, -- 16 -- ns tr RG = 25 Ω, VGS = 10 V -- 19 -- ns td(off) -- 62 -- ns tf -- 18 -- ns Qg VDS = 400 V, ID = 2.5 A, -- 9 -- nC Qgs VGS = 10 V -- 2 -- nC Qgd -- 4 -- nC SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qr.


TMP3N50Z TMPF3N50Z TMP3N50ZG


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)