N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery
D-PAK
TMD5N50/TMU5N50 TMD5N50G/TMU5N50G
VDSS = 550 V @Tjmax ID = 4.5A RDS(ON) = 1.65 W(max) @ VGS= 10 V
I-PAK
D
Device TMD5N50/TMU5N50 TMD5N50G/TMU5N50G
Package D-PAK/I-PAK D-PAK/I-PAK
G
S Marking TMD5N50/TMU5N50 TMD5N50G/TMU5N50G
Remark RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
August 2010 : Rev0
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TMD5N50(G)/TMU5N50(G) 500 ±30 4.5 2.86 18 240 4.5 9.25 92.5 0.74 4.5
-55~150 300
TMD5N50(G)/TMU5N50(G) 1.35 62.5
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/2
TMD5N50/TMU5N50 TMD5N50G/TMU5N50G
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test con...
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