TMU5N50

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery D-PAK TMD5N50/TMU5N50 TMD5N50G/TMU5N50G VDSS = 550 V @Tjmax ID = 4.5A RDS(ON) = 1.65 W(max) @ VGS= 10 V I-PAK D Device TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Package D-PAK/I-PAK D-PAK/I-PAK G S Marking TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA August 2010 : Rev0 www.trinnotech.com TMD5N50(G)/TMU5N50(G) 500 ±30 4.5 2.86 18 240 4.5 9.25 92.5 0.74 4.5 -55~150 300 TMD5N50(G)/TMU5N50(G) 1.35 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/2 TMD5N50/TMU5N50 TMD5N50G/TMU5N50G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test con...