2SK3873-01

2SK3873-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200407 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Equivalent circuit schematic Item Drain-source voltage Symbol VDS Ratings 280 Unit V Remarks Drain(D) VDSX 280 V VGS=-30V Continuous Drain Current ID 56 A Pulsed Drain Current Gate-Source Voltage ID(puls] VGS ±224 ±30 A V Gate(G) Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg 56 1039.1 A Note *1 mJ Note *2 41 mJ Note *3 20 5 410 2.50 +150 -55 to +150 kV/µs VDS=<280V kV/µs Note *4 W Tc=25°C Ta=25°C °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Source(S) Note *1:Tch<= 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=23A,L=3.37mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:IF=< -ID, -di/dt=50A/µs,VCC=< BVDSS, T...