2SK3835

Ordering number : EN8637 2SK3835 2SK3835 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1 VDD=20V, L=100µH, IAV=50A *2 L≤100µH, single pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : K3835 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=25A ID=25A, VGS=10V ID=25A, VGS=4V Ratings 60 ±20 50 200 3.0 40 150 --55 to +150 175 50 Unit V V A A W W °C °C mJ A min 60 1.2 21 Ratings typ max Unit V 1 µA ±10 µA 2.6 V 35 S 11.5 15 mΩ 16 22 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose...