N-Channel Silicon MOSFET
Ordering number : ENN8017
2SK3834
N-Channel Silicon MOSFET
2SK3834 General-Purpose Switching Device
Applications
Featu...
Description
Ordering number : ENN8017
2SK3834
N-Channel Silicon MOSFET
2SK3834 General-Purpose Switching Device
Applications
Features
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=100µH, IAV=60A *2. L≤100µH, 1 Pulse
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg EAS IAV
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Ratings 100 ±20 60 240 2.5 100 150
--55 to +150 225 60
Unit V V A A W W °C °C mJ A
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Marking : K3834
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) yfs
RDS(on)1 RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=30A ID=30A, VGS=10V ID=30A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz
min 100
1.2 26
Ratings typ
max
Unit
V
1 µA ±10 µA
2.6 V
43 S
20 26 mΩ
24 34 mΩ
6250
pF
440 pF
380 pF
Continued on next page.
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