2SK3823

Ordering number : ENN8241 2SK3823 2SK3823 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note : *1 VDD=20V, L=50µH, IAV=40A *2 L≤50µH, Single pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings 60 ±20 40 160 1.75 45 150 --55 to +150 56 40 Unit V V A A W W °C °C mJ A Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Marking : K3823 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= ±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=20A ID=20A, VGS=10V ID=20A, VGS=4V min 60 1.2 16 Ratings typ max Unit V 1 µA ±10 µA 2.6 V 28 S 21 27.5 mΩ 29 41 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support syste...