2SK357

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK357 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Fast Switching Speed APPLICATIONS ·High speed power switching applications. ·High Drain Current. ·High forward transfer admittance ·Low leakage Current. ·Low Drain-Source on resistance ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 150 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 5 A Total Dissipation@TC=25℃ 40 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK357 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 150V; VGS= 0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=3A;RL=25Ω toff Turn-off time MIN TYP MAX UNIT 150 V 1.5 3.5 V 0.6 0.9 Ω ±100 nA 1 mA 30 60 ns 40 80 ns 20 50 ns 60 120 ns isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.finep...