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2SD1803

Part Number	2SD1803
Manufacturer	Inchange Semiconductor
Description	TO-126 Silicon NPN Power Transistor
Published	Jun 16, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 5.0A ·Low Saturation Voltage - : VCE(sat)= 0.4...
Datasheet	2SD1803 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 5.
0A ·Low Saturation Voltage - : VCE(sat)= 0.
4V(Max)@ IC= 3.
0A, IB= 0.
15A ·Good Linearity of hFE ·Complement to Type 2SB1203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,high-speed inverters,converters, and other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5.
0 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector P...

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