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2SD1683

Part Number	2SD1683
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 16, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 4A ·Low Saturation Voltage - : VCE(sat)= 0.5V(...
Datasheet	2SD1683 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current-IC= 4A ·Low Saturation Voltage - : VCE(sat)= 0.
5V(Max)@ IC= 2A ·Complement to Type 2SB1143 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in voltage regulations, relay drivers, lamp drivers and electrical equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Tempera...

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