2SD1662

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1662 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max.)@ IC= 15A APPLICATIONS ·Designed for high current switching application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 5V IC Collector Current-Continuous 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1662 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A ,IB= 25mA VBE(sat) Base-Emitter Saturation Voltage IC= 15A ,IB= 25mA ICBO Collector Cutoff current VCB= 100V, IE= 0 1.5 V 2.2 V 100 μA IEBO Emitter Cutoff Current hFE DC Current Gain VEB= 5V; IC= 0 IC= 15A; VCE= 3V 1000 10 mA COB Output Capacitance fT Current-Gain—Bandwidth Product Switching Times IE= 0;VCB= 10V;ftest= 1.0MHz IC= 1A; VCE= 5V 280 14 pF MHz ton Turn-On Time tstg Storage Time tf...