C1309

SavantIC Semiconductor wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV vertical deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Product Specification 2SC1309 · Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC PT Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Open emitter Open base Open collector TC=25 VALUE 1200 500 6 5 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC1309 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 500 V V(BR)EBO Emitter-base breakdown votage IE=1.0mA; IC=0 5V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A 10 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.2 A 2V ICBO Collector cut-off current IEBO Emitter cut-off current VCB=1200V;IE=0 VEB=5V; IC=0 1.0 mA 1.0 mA hFE DC current gain IC=5A ; VCE=10V 10 2 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com PACKAGE OUTLINE Product Specification 2SC1309 Fig.2 Outline dimensions 3 ...