TMPF9N60

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G VDSS = 660 V @Tjmax ID = 9A RDS(ON) = 1.0 W(max) @ VGS= 10 V D G Device TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP9N60 / TMPF9N60 TMP9N60G / TMPF9N60G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient July 2010 : Rev0 Symbol RqJC RqJA www.trinnotech.com TMP9N60(G) TMPF9N60(G) 600 ±30 9 9* 5 5* 44 44* 662 9 15.8 158 51.4 1.26 0.41 4.5 -55~150 300 TMP9N60(G) 0.79 62.5 TMPF9N60(G) 2.43 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMP9N60/TMPF9N60 TMP9N60G/TMPF9N60G Electrical Characteristics : TC=25℃, unless oth...