TMPF12N60AG

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60A(G)/TMPF12N60A(G) BVDSS 600V N-channel MOSFET ID RDS(on) 12A < 0.65W D G S Device TMP12N60A / TMPF12N60A TMP12N60AG / TMPF12N60AG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP12N60A / TMPF12N60A TMP12N60AG / TMPF12N60AG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP12N60A(G) TMPF12N60A(G) 600 ±30 12 12 * 7.2 7.2 * 48 48 * 825 12 23.1 231 53.4 1.85 0.42 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP12N60A(G) 0.54 62.5 September 2012 : Rev0 www.trinnotech.com TMPF12N60A(G) 2.34 62.5 Unit ℃/W ℃/W 1/7 TMP12N60A(G)/TMPF12N60A(G) Electrical Characteristics : TC=25℃, unless otherwise noted Pa...