TMP16N60G

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP16N60/TMPF16N60 TMP16N60G/TMPF16N60G BVDSS 600V N-channel MOSFET ID RDS(on) 16A < 0.47W D G S Device TMP16N60 / TMPF16N60 TMP16N60G / TMPF16N60G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP16N60 / TMPF16N60 TMP16N60G / TMPF16N60G Remark RoHS Halogen Free Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP16N60(G) TMPF16N60(G) 600 ±30 16 16* 10.3 10.3* 64 64* 865 16 29 290 48 2.32 0.38 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP16N60(G) 0.43 62.5 December 2014 : Rev0.2 www.trinnotech.com TMPF16N60(G) 2.6 62.5 Unit ℃/W ℃/W 1/7 TMP16N60/TMPF16N60 TMP16N60G/TMPF16N60G Electrical Characteristics : TC=25℃, unless otherwise...