TMD2N65AZ

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD2N65AZ(G)/TMU2N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 1.8A < 4.6W I-PAK Device TMD2N65AZ / TMU2N65AZ TMD2N65AZG / TMU2N65AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMD2N65AZ / TMU2N65AZ TMD2N65AZG / TMU2N65AZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMD2N65AZ(G)/TMU2N65AZ(G) 650 ±30 1.8 1.38 7.2 77 1.8 5.2 52 0.41 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMD2N65AZ(G)/TMU2N65AZ(G) 2.4 110 August 2012 : Rev0 www.trinnotech.com Unit ℃/W ℃/W 1/6 TMD2N65AZ(G)/TMU2N65AZ(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test co...