DG6N60

JiangSu Dongchen Electronics Technology Co.,Ltd DG6N60 N N-CHANNEL ENHANCEMENT MODE MOSFET 201603-A General Description DG6N60N，， ，，，。 ，，。 DG6N60 is an N-channel enhancement mode MOSFET, which is produced using Dongchen Electronics’s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. MAIN CHARACTERISTICS VDSS ID RDS(ON) Crss 600 6.0 1.5 11 V A Ω pF Symbol Package 86-510-87136806 1 /13 http://www.jsdgme.com JiangSu Dongchen Electronics Technology Co.,Ltd ABSOLUTE MAXIMUM RATINGS (Tc=25℃) Parameter Symbol - Drain-Source Voltage ContinuesDrain Current ( 1) Plused Drain Current (note1) VDSS ID Tc=25℃ Tc=100℃ IDM Gate-to-Source Voltage ( 2) SinglePulsed AvalancheEnergy(note2) ( 1) Avalanche Current (note1) ( 1) Repetitive Avalanche Energy(note1) ( 3) Peak Diode Recovery(note3) Power Dissipation Power Dissipation Derating Factor VGS EAS IAR EAR dv/dt PD Tc=25℃ PD(DF) Above 25℃ TO-251/TO-252 TO-220/TO-262 TO-220F TO-251/TO-252 TO-220/TO-262 TO-220F Operatingand Storage Temperature Range MaximumTemperature for Soldering TJ，TSTG TL Value 600 6* 2.8* 24 ±30 218 4.0 10 4.5 51 100 33 0.39 0.8 0.26 150，-55～+150 300 THERMAL CHARACTERIASTIC Parameter Thermal Resistance，JunctiontoCase Thermal Resistance，Juncti...