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TMPF7N65AZ Dataheets PDF



Part Number TMPF7N65AZ
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF7N65AZ DatasheetTMPF7N65AZ Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP7N65AZ(G)/TMPF7N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 6.5A <1.4W Device TMP7N65AZ / TMPF7N65AZ TMP7N65AZG / TMPF7N65AZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC =.

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance TMP7N65AZ(G)/TMPF7N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 6.5A <1.4W Device TMP7N65AZ / TMPF7N65AZ TMP7N65AZG / TMPF7N65AZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP7N65AZ / TMPF7N65AZ TMP7N65AZG / TMPF7N65AZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP7N65AZ(G) TMPF7N65AZ(G) 650 ±30 6.5 6.5 * 3.7 3.7 * 26 26 * 390 6.5 12 120 39 0.96 0.31 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP7N65AZ(G) 1.04 62.5 October 2012 : Rev0 www.trinnotech.com TMPF7N65AZ(G) 3.2 62.5 Unit ℃/W ℃/W 1/7 TMP7N65AZ(G)/TMPF7N65AZ(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 650 -- -- V Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- IDSS VDS = 520 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 3 -- 5 V RDS(on) VGS = 10 V, ID = 3.25 A -- 1.2 1.4 W gFS VDS = 30 V, ID = 3.25 A -- 10 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) tr td(off) tf Qg Qgs Qgd VDD = 325 V, ID = 6.5 A, RG = 25 Ω VDS = 520V, ID = 6.5 A, VGS = 10 V SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qrr ---- ---VGS = 0 V, IS = 6.5 A VGS = 0 V, IS = 6.5 A dIF / dt = 100 A/µs Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=17.1mH, I AS = 6.5A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 6.5A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics -- 1072 --- 103 --- 12 -- -- 35 --- 46 --- 82 --- 27 --- 22 --- 5 --- 10 -- -- -- 6.5 -- -- 26 -- -- 1.5 -- 345 --- 2.6 -- pF pF pF ns ns ns ns nC nC nC A A V ns µC October 2012 : Rev0 www.trinnotech.com 2/7 Drain Current, I [A] D TMP7N65AZ(G)/TMPF7N65AZ(G) 16 Top V =15.0V GS 10.0V 9.0V 12 8.0V 7.0V 6.0V Bottom 5.5V 8 4 1. T = 25℃ C 2. 250μs Pulse Test 0 0 5 10 15 20 Drain-Source Voltage, V [V] DS Drain Current, I [A] D V = 30V DS 250 μs Pulse Test 10 150℃ 25℃ 1 -55℃ 0.1 2468 Gate-Source Voltage, V [V] GS 10 2.0 T = 25℃ J 1.5 1.0 V = 10V GS V = 20V GS 0.5 0 2 4 6 8 10 12 14 Drain Current,I [A] D Reverse Drain Current, I [A] DR 30 V = 0V GS 250μs Pulse Test 25 20 150℃ 25℃ 15 10 5 0 0.0 0.5 1.0 1.5 Source-Drain Voltage, V [V] SD 2.0 Drain-Source On-Resistance R [Ω] DS(ON) Capacitance [pF] Gate-Source Voltage, V [V] GS 2000 1500 1000 500 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd C iss V =0V GS f = 1 MHz C oss C rss 12 I = 6.5A D 10 8 6 4 2 V = 325V DS V = 130V DS V = 520V DS 0 10-1 100 101 Drain-Source Voltage, V [V] DS October 2012 : Rev0 0 0 www.trinnotech.com 5 10 15 20 Total Gate Charge, Q [nC] G 25 3/7 Drain-Source Breakdown Voltage BV , (Normalized) DSS TMP7N65AZ(G)/TMPF7N65AZ(G) 1.20 1.15 1.10 V =0V GS I = 250 μA D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 160 Drain-Source On-Resistance R , (Normalized) DS(ON) 3.0 V = 10 V GS I = 3.25 A D 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 Drain Current, I [A] D 7 1.5 6 Gate Threshold Voltage V , (Normalized) TH 5 1.0 4 3 0.5 2 1 V =V DS GS I = 250  A D 0 0.0 25 50 75 100 125 150 -80 -40 0 40.


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