Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
TMP7N65AZ(G)/TMPF7N65AZ(G)
BVDSS 650V
N-channel MOSFET
ID RDS(on)
6.5A
<1.4W
Device TMP7N65AZ / TMPF7N65AZ TMP7N65AZG / TMPF7N65AZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP7N65AZ / TMPF7N65AZ TMP7N65AZG / TMPF7N65AZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP7N65AZ(G) TMPF7N65AZ(G) 650 ±30
6.5 6.5 * 3.7 3.7 * 26 26 *
390 6.5 12 120 39 0.96 0.31 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP7N65AZ(G) 1.04 62.5
October 2012 : Rev0
www.trinnotech.com
TMPF7N65AZ(G) 3.2 62.5
Unit ℃/W ℃/W
1/7
TMP7N65AZ(G)/TMPF7N65AZ(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 650 --
--
V
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
--
IDSS
VDS = 520 V, TC = 125°C
--
-- 1 µA -- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
3
--
5
V
RDS(on)
VGS = 10 V, ID = 3.25 A
--
1.2 1.4
W
gFS VDS = 30 V, ID = 3.25 A -- 10 -- S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD = 325 V, ID = 6.5 A, RG = 25 Ω
VDS = 520V, ID = 6.5 A, VGS = 10 V
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM VSD trr Qrr
----
---VGS = 0 V, IS = 6.5 A VGS = 0 V, IS = 6.5 A dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=17.1mH, I AS = 6.5A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 6.5A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-- 1072 --- 103 --- 12 --
-- 35 --- 46 --- 82 --- 27 --- 22 --- 5 --- 10 --
-- -- 6.5
-- -- 26 -- -- 1.5 -- 345 --- 2.6 --
pF pF pF
ns ns ns ns nC nC nC
A
A V ns µC
October 2012 : Rev0
www.trinnotech.com
2/7
Drain Current, I [A] D
TMP7N65AZ(G)/TMPF7N65AZ(G)
16
Top V =15.0V GS 10.0V 9.0V
12 8.0V 7.0V 6.0V
Bottom 5.5V
8
4
1. T = 25℃ C
2. 250μs Pulse Test 0
0 5 10 15 20
Drain-Source Voltage, V [V] DS
Drain Current, I [A] D
V = 30V DS
250 μs Pulse Test
10 150℃
25℃ 1
-55℃
0.1 2468
Gate-Source Voltage, V [V] GS
10
2.0
T = 25℃ J
1.5
1.0
V = 10V GS
V = 20V GS
0.5 0 2 4 6 8 10 12 14
Drain Current,I [A] D
Reverse Drain Current, I [A] DR
30
V = 0V GS
250μs Pulse Test
25
20
150℃
25℃
15
10
5
0 0.0 0.5 1.0 1.5
Source-Drain Voltage, V [V] SD
2.0
Drain-Source On-Resistance R [Ω]
DS(ON)
Capacitance [pF]
Gate-Source Voltage, V [V] GS
2000 1500 1000
500
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
C iss
V =0V GS
f = 1 MHz
C oss
C rss
12 I = 6.5A
D
10
8
6
4
2
V = 325V DS
V = 130V DS
V = 520V DS
0 10-1 100 101
Drain-Source Voltage, V [V] DS
October 2012 : Rev0
0 0
www.trinnotech.com
5 10 15 20
Total Gate Charge, Q [nC] G
25
3/7
Drain-Source Breakdown Voltage BV , (Normalized)
DSS
TMP7N65AZ(G)/TMPF7N65AZ(G)
1.20 1.15 1.10
V =0V GS
I = 250 μA
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
160
Drain-Source On-Resistance R , (Normalized)
DS(ON)
3.0
V = 10 V GS
I = 3.25 A
D
2.5
2.0
1.5
1.0
0.5
0.0 -80
-40 0
40 80 120
Junction Temperature, T [oC]
J
160
Drain Current, I [A] D
7 1.5
6
Gate Threshold Voltage V , (Normalized)
TH
5 1.0
4
3
0.5 2
1
V =V DS GS
I = 250 A
D
0 0.0
25
50
75
100 125 150
-80 -40
0
40.