TMP10N65A

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N65A(G)/TMPF10N65A(G) BVDSS 650V N-channel MOSFET ID RDS(on) 9.5A <0.82W D G S Device TMP10N65A / TMPF10N65A TMP10N65AG / TMPF10N65AG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP10N65A / TMPF10N65A TMP10N65AG / TMPF10N65AG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP10N65A(G) TMPF10N65AG) 650 ±30 9.5 9.5 * 5.83 5.83 * 38 38 * 690 9.5 19.8 198 52 1.58 0.41 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP10N65A(G) 0.63 62.5 September 2012 : Rev0 www.trinnotech.com TMPF10N65A(G) 2.4 62.5 Unit ℃/W ℃/W 1/7 TMP10N65A(G)/TMPF10N65A(G) Electrical Characteristics : TC=25℃, unless otherwise noted...