TMP9N70

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP9N70(G)/TMPF9N70(G) BVDSS 700V N-channel MOSFET ID RDS(on) 9A <1.05W D G S Device TMP9N70 / TMPF9N70 TMP9N70G / TMPF9N70G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP9N70 / TMPF9N70 TMP9N70G / TMPF9N70G Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP9N70(G) TMPF9N70(G) 700 ±30 9 9* 5.28 5.28 * 36 36 * 396 9 19.8 198 52 1.58 0.41 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA July 2012 : Rev0 www.trinnotech.com TMP9N70(G) 0.63 62.5 TMPF9N70(G) 2.4 62.5 Unit ℃/W ℃/W 1/7 TMP9N70(G)/TMPF9N70(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max...