TMAN8N80

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 800V TMAN8N80 N-channel MOSFET ID RDS(on) 8A < 1.4W Device TMAN8N80 Package TO-3PN Marking TMAN8N80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA February 2013 : Rev 1.0 www.trinnotech.com TMAN8N80 800 ±30 8 4.9 32 201 8 26.5 265 2.12 4.5 -55~150 300 TMAN8N80 0.47 62.5 Remark RoHS Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMAN8N80 Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 800 -- -- V Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- IDSS VDS = 640 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Sour...