N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G
VDSS = 880 V @Tjmax ID = 9.5A RDS(ON) = 1.05 W(max) @ VGS= 10 V
D
G
Device TMP10N80 / TMPF10N80 TMP10N80G / TMPF10N80G
Package TO-220 / TO-220F TO-220 / TO-220F
S Marking TMP10N80 / TMPF10N80 TMP10N80G / TMPF10N80G
Remark RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
November 2014 : Rev1.1
Symbol RqJC RqJA
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TMP10N80(G) TMPF10N80(G)
800 ±30
9.5 9.5 * 6.4 6.4 *
38 38*
231 9.5
29 290
48
2.32 0.38
4.5 -55~150
300
TMP10N80(G) 0.43 62.5
TMPF10N80(G) 2.6 62.5
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/7
TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G
Electrical Characteristics : TC=25℃...
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