TMP10N80

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G VDSS = 880 V @Tjmax ID = 9.5A RDS(ON) = 1.05 W(max) @ VGS= 10 V D G Device TMP10N80 / TMPF10N80 TMP10N80G / TMPF10N80G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP10N80 / TMPF10N80 TMP10N80G / TMPF10N80G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient November 2014 : Rev1.1 Symbol RqJC RqJA www.trinnotech.com TMP10N80(G) TMPF10N80(G) 800 ±30 9.5 9.5 * 6.4 6.4 * 38 38* 231 9.5 29 290 48 2.32 0.38 4.5 -55~150 300 TMP10N80(G) 0.43 62.5 TMPF10N80(G) 2.6 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/7 TMP10N80/TMPF10N80 TMP10N80G/TMPF10N80G Electrical Characteristics : TC=25℃...