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TMAN12N80AZ

N-channel MOSFET

Description

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance BVDSS 800V TMAN12N80AZ N-channel MOSFET ID RDS(on) 12A < 0.65W Device TMAN12N80AZ Package TO-3PN Marking TMAN12N80AZ Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage ...

TRinno

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