TMPF7N90G

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N90/TMPF7N90G VDSS = 990 V @Tjmax ID = 7A RDS(ON) = 1.9 W(max) @ VGS= 10 V D G Device TMP7N90 TMPF7N90G Package TO-220 TO-220F S Marking TMP7N90 Remark RoHS TMPF7N90G Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient February 2014 : Rev 0.1 Symbol RqJC RqJA www.trinnotech.com TMP7N90 TMPF7N90G 900 ±30 7 7* 4.31 4.31 * 28 28* 106 7 25 250 40.3 2 0.32 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ TMP7N90 0.5 62.5 TMPF7N90G 3.1 62.5 Unit ℃/W ℃/W 1/7 TMP7N90/TMPF7N90G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS ...