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TMAN9N90

N-channel MOSFET

Description

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TO-3PN BVDSS 900V TMAN9N90 N-channel MOSFET ID RDS(on) 9.5A < 1.4W D G Device TMAN9N90 Package TO-3PN Marking TMAN9N90 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse...

TRinno

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