2SK513

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK513 DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 800 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3 A Total Dissipation@TC=25℃ 60 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK513 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10V; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID= 2A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 VSD Diode Forward Voltage IF= 2A; VGS= 0 tr Rise time ton Turn-on time tf Fall time VGS=15V;ID=2A; RL=15Ω toff Turn-off time MIN TYP. MAX UNIT 800 V 2 4V 5.0 6.0 Ω ±1 uA 1 mA 0.9 V 35 ns 50 ns 35 ns 120 ns isc website：www.iscsemi.cn 2 isc & iscsemi is register...