MT3S19

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features Low-Noise Figure:NF=1.5 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12.5 dB (typ.) (@ f=1 GHz) MT3S19 Unit: mm Marking 3 T6 1. Base 2. Emitter 3. Collector 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB Pc PC(Note 1) Tj Tstg 12 6 2 80 10 180 800 150 −55 to 150 V V V mA mA mW °C °C Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-03-31 Microwave Characteristics (Ta = 25°C) MT3S19 Characteristics Symbol Te...