MT3S14FS

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S14FS VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Buffer Applications MT3S14FS Unit: mm 0.2±0.05 0.6±0.05 0.35±0.05 0.15±0.05 Superior performance in buffer applications Superior noise characteristics :NF = 1.7 dB, |S21e|2 = 7 dB (f =2GHz) 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 -0.04 0.48 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note) Tj Tstg Rating 6 2.5 1.5 30 10 85 125 −55~125 Unit V V V mA mW mW °C °C 0.1±0.05 1.BASE 2.EMITTER fSM 3.COLLECOTR JEDEC ― JEITA ― TOSHIBA 2-1E1A Weight: 0.0006g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board. ...