MT3S113TU

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=12.5dB(Typ.) (@ f=1GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 23 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 R7 1.1. ベBーasスe 2.2. エEミmiッtteタr 3.3. コCレollクecタtor 12 Absolute Maximum Ratings (Ta = 25°C) UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight : 6.6mg (typ.) Characteristics Symbol Rating Unit Collector-emitter voltage VCES Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector-current IC Base-current IB Collector power dissipation PC(Note1) Junction temperature Tj Storage temperature range Tstg Note1:The device is mounted on a ceramic board 13 V 5.3 V 0.6 V 100 mA 10 mA 900 mW 150 °C −55 to 150 °C (25.4 mm x 25.4 mm x 0.8 mm (t)) Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and est...