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MT3S111TU

Toshiba Semiconductor

Silicon-Germanium NPN Epitaxial Planar Type Transistor

Description
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 23 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 R5 1. BASE ...


Toshiba Semiconductor

MT3S111TU

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