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MT3S107FS

Toshiba Semiconductor
Part Number MT3S107FS
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise A...
Datasheet PDF File MT3S107FS PDF File

MT3S107FS
MT3S107FS


Overview
MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=0.
85dB (@f=2GHz) • High Gain:|S21e|2= 13dB (@f=2GHz) Marking 3 42 2 1 +0.
02 -0.
04 0.
6 ±0.
05 0.
35±0.
05 0.
15±0.
05 Unit:mm 1.
0±0.
05 0.
8±0.
05 1 3 0.
1±0.
05 2 0.
1±0.
05 0.
2±0.
05 0.
48 0.
1±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 10 4.
5 1.
5 20 10 100 150 −55~150 Unit V V V m...



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