TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111
VHF-UHF Low-Noise, Low-Distortion Amplifier Appli...
TOSHIBA
Transistor Silicon-Germanium
NPN Epitaxial Planar Type
MT3S111
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) High Gain:|S21e|2=12 dB (typ.) (@ f=1 GHz)
MT3S111
Unit: mm
Marking
R5
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range
Symbol
VCES VCEO VEBO
IC IB PC PC (Note 1) Tj Tstg
Rating
13 6 0.6 100 10 160 700 150 −55 to 150
Unit
V V V mA mA mW mW °C °C
1. Base 2. Emitter 3. Collector
S-Mini
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of commercial production
2007-12 1 2014-09-26
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