N-Channel PowerTrench MOSFET
FDS8978 Dual N-Channel PowerTrench® MOSFET
FDS8978 N-Channel PowerTrench® MOSFET
30V, 7.5A, 18mΩ
January 2011
Feature...
Description
FDS8978 Dual N-Channel PowerTrench® MOSFET
FDS8978 N-Channel PowerTrench® MOSFET
30V, 7.5A, 18mΩ
January 2011
Features
rDS(on) = 18mΩ, VGS = 10V, ID = 7.5A
rDS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A
High performance trench technology for extremely low rDS(on)
Low gate charge
High power and current handling capability
100% Rg Tested
RoHS Compliant
D1 D1
D2 D2
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
DC/DC converters
D2 5 D2 6
Q2
4 G2 3 S2
SO-8 Pin 1
S2 G2 G1 S1
D1 D1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGS
ID
EAS PD
Parameter Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation Derate above 25oC
TJ, TSTG Operating and Storage Temperature
7 8
Thermal Characteristics
RθJC RθJA RθJA
Thermal Resistance, Junction to Case (Note 2) Thermal Resistance, Junction to Ambient (Note 2a) Thermal Resistance, Junction to Ambient (Note 2c)
Package Marking and Ordering Information
Device Marking FDS8978
Device FDS8978
Package SO-8
Reel Size 330mm
2 G1 Q1 1 S1
Ratings 30 ±20
7.5 6.9 49 57 1.6 13 -55 to 150
Units...
Similar Datasheet