CMST2907A

NE W Central CMST2907A DESCRIPTION: TM Semiconductor Corp. SUPER-MINI PNP SILICON TRANSISTOR SUPER mini TM The CENTRAL SEMICONDUCTOR CMST2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a super-mini surface mount package, designed for small signal general purpose and switching applications. SOT-323 CASE MAXIMUM RATINGS: (TA=25oC) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA UNITS V V V mA mW oC oC/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 60 60 5.0 600 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125oC VCE=30V, VBE=0.5V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA MIN MAX 10 10 50 UNITS nA µA nA V V V V V V V 60 60 5.0 0.4 1.6 1.3 2.6 75 100 248 SYMBOL hFE hFE hFE fT Cob Cib ton td tr toff ts tf TEST CONDITIONS VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VBE=2.0V, IC=0, f=1.0MHz VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=30V, VBE=0.5, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA MIN...