N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery
TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G
VDSS = 550 V @Tjmax ID = 11A RDS(ON) = 0.67 W(max) @ VGS= 10 V
D
G
Device TMP11N50 / TMPF11N50 TMP11N50G / TMPF11N50G
Package TO-220 / TO-220F TO-220 / TO-220F
S Marking TMP11N50 / TMPF11N50 TMP11N50G / TMPF11N50G
Remark RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
July 2010 : Rev1
Symbol RqJC RqJA
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TMP11N50(G) TMPF11N50(G) 500 ±30
11 11 * 6 6* 44 44*
544 11 15.8 158 51.4 1.26 0.41 4.5 -55~150
300
TMP11N50(G) 0.79 62.5
TMPF11N50(G) 2.43 62.5
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/5
TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G
Electrical Characteristics : T...
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