TMPF13N50A

Features  Low gate charge  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Top view TO-220F BVDSS 500V TMPF13N50A N-channel MOSFET ID RDS(on) 13A <0.48W Ordering Part Number TMPF13N50A Package TO-220F Marking TMPF13N50A Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA September 2013 : Rev 0.0 www.trinnotech.com Value 500 ±30 13 8.2 52 657 13 5.2 52 0.41 4.5 -55~150 300 Value 2.4 62.5 Remark RoHS Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMPF13N50A Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Unit OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 500 -- -- V Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- IDSS VDS = 400 V, TC = 125 ℃ -- -- 1 µA -- 10 µA Forw...