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TMU4N60AZG

TRinno

N-channel MOSFET

Description
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD4N60AZ(G)/TMU4N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 4.0A < 2.5W I-PAK Device TMD4N60AZ / TMU4N60AZ TMD4N60AZG / TMU4N60AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute...


TRinno

TMU4N60AZG

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